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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION *With TO-220F package *High Voltage *High speed switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1200 550 9 6 12 3 6 40 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.13 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SC5382 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 Collector-emitter sustaining voltage IC=0.1A; IB=0 IC=3A; IB=0.6 A IC=3A; IB=0.6 A VCB=1200V; IE=0 VCE=550V; IB=0 VEB=9V; IC=0 IC=3A ; VCE=5V IC=1mA ; VCE=5V 550 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 1.5 0.1 0.1 0.1 10 V mA mA mA DC current gain 10 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;IB1=0.6A ;IB2=1.2A RL=50>;VBB2=4V 1.3 4.0 0.3 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5382 Fig.2 outline dimensions 3 |
Price & Availability of 2SC5382 |
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